參數(shù)資料
型號: PHX4N40E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 2.7 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝: FULL PACK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 72K
代理商: PHX4N40E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX4N40E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
hs
= 25C
MIN.
-
TYP. MAX. UNIT
-
4.4
A
T
hs
= 25C
-
-
18
A
I
S
= 4.4 A; V
GS
= 0 V
I
S
= 4.4 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
250
2.2
December 1998
3
Rev 1.200
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