- 您現(xiàn)在的位置：買賣IC網 > PDF目錄370000 > PHX4N50E (NXP SEMICONDUCTORS) PowerMOS transistor Isolated version of PHP4N50E PDF資料下載
參數資料
| 型號： | PHX4N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of PHP4N50E |
| 中文描述： | 2.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-186A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | PHX4N50E |
Philips Semiconductors
Objective specification
PowerMOS transistor
Isolated version of PHP4N50E
PHX4N50E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a full
pack, plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
500
2.9
30
1.5
V
A
W
motor
control
purpose
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
CONDITIONS
MIN.
-
-
-
-
-
-
MAX.
500
500
30
2.9
1.8
11.6
UNIT
V
V
V
A
A
A
R
GS
= 20 k
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
I
DM
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
I
DR
T
hs
= 25 C
-
2.9
A
I
DRM
T
hs
= 25 C
-
11.6
A
P
tot
T
stg
T
j
T
hs
= 25 C
-
30
150
150
W
C
C
-55
-
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 5.3 A; V
DD
≤
50 V; V
GS
= 10 V;
R
GS
= 50
MIN.
MAX.
UNIT
T
= 25C prior to surge
T
= 100C prior to surge
-
-
-
280
44
7.4
mJ
mJ
mJ
W
DSR
1
Drain-source repetitive
unclamped inductive turn-off
energy
I
D
= 5.3 A; V
DD
≤
50 V; V
GS
= 10 V;
R
GS
= 50
; T
j
≤
150 C
Pulse width and frequency limited by T
j(max)
1 2 3
case
d
g
s
November 1996
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| PHX4N60E | PowerMOS transistors Avalanche energy rated |
| PHX4ND40E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHX8NQ11T | N-channel TrenchMOS-TM standard level FET |
| PI-F2731-75L | Radar Pulsed Power Transistor, 75W, 300ms Pulse, 10% Duty 2.7 - 3.1 GHz |
| PI0000HSN | 25-レm-Pitch Wide Aperture Spectroscopic Photodiode Arrays |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHX4N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX4ND40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHX5N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP10N40E |
| PHX5N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP8N50E |
| PHX6N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
發(fā)布緊急采購，3分鐘左右您將得到回復。