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參數(shù)資料
| 型號(hào)： | PHX4N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of PHP4N50E |
| 中文描述： | 2.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-186A, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 24K |
| 代理商： | PHX4N50E |
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX4N50E
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
4.1
UNIT
K/W
R
th j-a
-
55
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 0.25 mA
V
DS
= 500 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
30 V; V
= 0 V
V
GS
= 10 V; I
D
= 2.65 A
2.0
-
-
-
-
3.0
10
0.1
10
1.3
4.0
100
1.0
100
1.5
V
μ
A
mA
nA
I
GSS
R
DS(ON)
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
V
SD
I
F
= 5.3 A ;V
GS
= 0 V
-
1.1
1.4
V
November 1996
2
Rev 1.000
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