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參數(shù)資料
| 型號： | PHX8ND50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors FREDFET, Avalanche energy rated |
| 中文描述： | 4.2 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | PHX8ND50E |
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHX8ND50E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Isolated package
Fast reverse recovery diode
V
DSS
= 500 V
I
D
= 4.2 A
R
DS(ON)
≤
0.85
t
rr
= 180 ns
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel,
field-effect
incorporating
E
pitaxial
D
iode (FRED). This gives
improved switching performance in
half
bridge
and
converters
making
particularly suitable for inverters,
lighting ballasts and motor control
circuits.
enhancement
power
a
F
ast
mode
PIN
DESCRIPTION
transistor,
R
ecovery
1
gate
2
drain
full
this
bridge
device
3
source
case
isolated
The PHX8ND50E is supplied in the
SOT186A
full
package.
pack,
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
4.2
2.7
34
37
150
UNIT
V
V
V
A
A
A
W
C
T
hs
= 25 C; V
GS
= 10 V
T
hs
= 100 C; V
GS
= 10 V
T
hs
= 25 C
T
hs
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
1
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
case
August 1998
1
Rev 1.100
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