參數(shù)資料
型號(hào)： PHX8ND50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors FREDFET, Avalanche energy rated
中文描述： 4.2 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 6/8頁(yè)
文件大?。?/td> 61K
代理商： PHX8ND50E
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHX8ND50E
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
0
50
Qg, Gate charge (nC)
100
150
0
5
10
15
PHP8N50
VGS, Gate-Source voltage (Volts)
ID = 8.5 A
Tj = 25 C
VDD = 400 V
250 V
100 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
PHP8N50
VSDS, Source-Drain voltage (Volts)
IF, Source-Drain diode current (Amps)
VGS = 0 V
Tj = 25 C
150 C
0
10
20
30
40
50
60
10
100
1000
td(on)
PHP8N50
RG, Gate resistance (Ohms)
Switching times (ns)
VDD = 250 V
Tj = 25 C
RD = 30 Ohms
VGS = 10 V
tf
tr
td(off)
PHP8N50E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche = 125 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP8N50E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
August 1998
6
Rev 1.100
相關(guān)PDF資料
PDF描述
PHX9NQ20T N-channel TrenchMOS transistor
PHF9NQ20 N-channel TrenchMOS transistor
PHF9NQ20T N-channel TrenchMOS transistor
PI-810 Analog Miscellaneous
PI0000WSN 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Arrays
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX8NQ11T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS-TM standard level FET
PHX8NQ11T,127 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX9NQ20T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX9NQ20T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHY03APWR 制造商:Texas Instruments 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*