參數(shù)資料
型號(hào)： PHX8NQ11T
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel TrenchMOS-TM standard level FET
中文描述： 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220F, FULL PACK-3
文件頁(yè)數(shù)： 2/12頁(yè)
文件大小： 84K
代理商： PHX8NQ11T
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 14 May 2004
2 of 12
9397 750 13285
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
TO-220F
Description
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220 ‘full pack’
Version
SOT186A
PHX8NQ11T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
110
110
±
20
7.5
4.7
30.2
27.7
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
h
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
h
= 100
°
C; V
GS
= 10 V;
Figure 2
T
h
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
h
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
h
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
h
= 25
°
C
-
-
7.5
30.2
A
A
unclamped inductive load; I
D
= 4.5 A;
t
p
= 0.1 ms; V
DD
≤
100 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
-
35
mJ
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