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參數(shù)資料
| 型號： | PHX9NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220, FPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 113K |
| 代理商： | PHX9NQ20T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX9NQ20T , PHF9NQ20T
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); V
GS
≥
10 V
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
.
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 C
.
R
DS(ON)
= f(I
D
)
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
Pulse width, tp (s)
1E-02
1E-01
1E+00
1E+01
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
Drain-Source Voltage, VDS (V)
0.8
1
1.2
1.4
1.6
1.8
2
Drain Current, ID (A)
Tj = 25 C
5 V
VGS = 10V
5.5 V
6 V
8 V
4.5 V
0.1
1
10
100
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100us
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
1
2
3
5
6
7
8
9
10
Drain4
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
8 V
5 V
6 V
5.5 V
4.5 V
November 2000
4
Rev 1.100
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