參數(shù)資料
型號(hào)： PHX9NQ20T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor
中文描述： 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-220, FPAK-3
文件頁(yè)數(shù)： 6/9頁(yè)
文件大?。?/td> 113K
代理商： PHX9NQ20T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX9NQ20T , PHF9NQ20T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 9 A
Tj = 25 C
VDD = 40 V
VDD = 160 V
0.1
1
10
0.001
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
Source-Drain Voltage, VSDS (V)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
November 2000
6
Rev 1.100
相關(guān)PDF資料
PDF描述
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參數(shù)描述
PHX9NQ20T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHY03APWR 制造商:Texas Instruments 功能描述:
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PHY1040-01QS-BR 制造商:Maxim Integrated Products 功能描述:FTTX LASER DRIVER/LIM. AMP - Tape and Reel
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