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1996 Microchip Technology Inc.
Preliminary
DS30559A-page 91
PIC16C64X & PIC16C66X
12.0
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
Ambient Temperature under bias............................................................................................................. –40
Storage Temperature ............................................................................................................................... –65
Voltage on any pin with respect to V
SS
(except V
DD
and MCLR) .....................................................–0.3V to V
Voltage on V
DD
with respect to V
SS
................................................................................................................ 0 to +7.5V
Voltage on MCLR with respect to V
SS
(Note 2) .................................................................................................0 to +14V
Total power Dissipation (Note 1)...............................................................................................................................1.0W
Maximum Current out of V
SS
pin ..........................................................................................................................300 mA
Maximum Current into V
DD
pin .............................................................................................................................250 mA
Input Clamp Current, I
IK
(V
I
<0 or V
I
> V
DD
)
.......................................................................................................................±
Output Clamp Current, I
OK
(Vo <0 or Vo>V
DD
)
................................................................................................................±
Maximum Output Current sunk by any I/O pin........................................................................................................25 mA
Maximum Output Current sourced by any I/O pin...................................................................................................25 mA
Maximum current sunk by
PORTA, PORTB, and PORTE (combined) (Note 2) ...................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (combined) (Note 2)..............................................200 mA
Maximum current sunk by PORTC and PORTD (combined) (Note 2)..................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined) (Note 2).............................................................200 mA
Note 1:
Power dissipation is calculated as follows: P
DIS
= V
Note 2:
PORTD and PORTE are not implemented on the PIC16C641 and PIC16C642.
°
°
to +125
to +150
+ 0.3V
°
°
C
C
DD
20 mA
20 mA
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
-V
OH
) x I
OH
} +
∑
(V
O
l x I
OL
)
TABLE 12-1:
CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS
AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
NOTICE
: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
OSC
PIC16C641-04
PIC16C642-04
PIC16C661-04
PIC16C662-04
PIC16C641-10
PIC16C642-10
PIC16C661-10
PIC16C662-10
PIC16C641-20
PIC16C642-20
PIC16C661-20
PIC16C662-20
PIC16LC641-04
PIC16LC642-04
PIC16LC661-04
PIC16LC662-04
JW Devices
RC
V
I
DD
I
PD
Freq: 4.0 MHz max.
V
DD
: 4.0V to 6.0V
I
DD
: 5 mA max. @ 5.5V
I
PD
: 21
μ
A max. @ 4.0V
Freq: 4.0 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 13.5 mA typ. @ 5.5V
I
PD
: 1.5
μ
A typ. @ 4.5V
Freq: 4.0 MHz max.
V
DD
: 4.0V to 6.0V
I
DD
: 52.5
μ
A typ. @
32 kHz, 4.0V
I
PD
: 0.9
μ
A typ. @ 4.0V
Freq: 200 kHz max.
The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX specifications. It is recommended that
the user select the device type that ensures the specifications required.
DD
: 4.0V to 6.0V
: 5 mA max. @ 5.5V
: 21
μ
A max. @ 4.0V
V
I
DD
I
PD
Freq: 4.0 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 2.7 mA typ. @ 5.5V
I
PD
: 1.5
μ
A typ. @ 4.0V
Freq: 4.0 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 30 mA max. @ 5.5V
I
PD
: 1.5
μ
A typ. @ 4.5V
Freq: 10 MHz max.
Do not use in LP mode
DD
: 4.5V to 5.5V
: 2.7 mA typ. @ 5.5V
: 1.5
μ
A typ. @ 4.0V
V
I
DD
I
PD
Freq: 4.0 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 2.7 mA typ. @ 5.5V
I
PD
: 1.5
μ
A typ. @ 4.0V
Freq: 4.0 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 30 mA max. @ 5.5V
I
PD
: 1.5
μ
A typ. @ 4.5V
Freq: 20 MHz max.
Do not use in LP mode
DD
: 4.5V to 5.5V
: 2.7 mA typ. @ 5.5V
: 1.5
μ
A typ. @ 4.0V
V
I
DD
I
PD
Freq: 4.0 MHz max.
V
DD
: 3.0V to 6.0V
I
DD
: 2.0 mA typ. @ 3.0V
I
PD
: 0.9
μ
A typ. @ 3.0V
Freq: 4.0 MHz max.
Do not use in HS mode
DD
: 3.0V to 6.0V
: 2.0 mA typ. @ 3.0V
: 0.9
μ
A typ. @ 3.0V
V
I
DD
I
PD
Freq: 4.0 MHz Max.
V
DD
: 4.0V to 6.0V
I
DD
: 5 mA max. @ 5.5V
I
PD
: 21
μ
A max. @ 4.0V
Freq: 4.0 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 30 mA max. @ 5.5V
I
PD
: 1.5
μ
A typ. @ 4.5V
Freq: 10 MHz max.
V
DD
: 3.0V to 6.0V
I
DD
: 48
μ
A max. @
32 kHz, 3.0V
I
PD
: 5.0
μ
A max. @ 3.0V
Freq: 200 kHz max.
DD
: 4.0V to 6.0V
: 5 mA max. @ 5.5V
: 21
μ
A max. @ 4.0V
XT
HS
LP
V
I
DD
DD
: 3.0V to 6.0V
: 48
μ
A max. @
32 kHz, 3.0V
: 5.0
μ
A max. @ 3.0V
Freq: 200 kHz max.
I
PD
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