參數(shù)資料
型號: PIC18F448-I/PT
廠商: Microchip Technology
文件頁數(shù): 87/116頁
文件大小: 0K
描述: IC PIC MCU FLASH 8KX16 44TQFP
產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
8-bit PIC® Microcontroller Portfolio
標(biāo)準(zhǔn)包裝: 160
系列: PIC® 18F
核心處理器: PIC
芯體尺寸: 8-位
速度: 40MHz
連通性: CAN,I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,LVD,POR,PWM,WDT
輸入/輸出數(shù): 33
程序存儲器容量: 16KB(8K x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 256 x 8
RAM 容量: 768 x 8
電壓 - 電源 (Vcc/Vdd): 4.2 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 44-TQFP
包裝: 托盤
配用: XLT44PT3-ND - SOCKET TRAN ICE 44MQFP/TQFP
AC164305-ND - MODULE SKT FOR PM3 44TQFP
444-1001-ND - DEMO BOARD FOR PICMICRO MCU
AC164020-ND - MODULE SKT PROMATEII 44TQFP
PIC18FXX8
DS41159E-page 70
2006 Microchip Technology Inc.
6.4
Erasing Flash Program Memory
The minimum erase block is 32 words or 64 bytes. Only
through the use of an external programmer, or through
ICSP control, can larger blocks of program memory be
bulk erased. Word erase in the Flash array is not
supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased.
TBLPTR<5:0> are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
6.4.1
FLASH PROGRAM MEMORY
ERASE SEQUENCE
The sequence of events for erasing a block of internal
program memory location is:
1.
Load Table Pointer with address of row being
erased.
2.
Set the EECON1 register for the erase operation:
set the EEPGD bit to point to program memory;
clear the CFGS bit to access program memory;
set the WREN bit to enable writes;
set the FREE bit to enable the erase.
3.
Disable interrupts.
4.
Write 55h to EECON2.
5.
Write 0AAh to EECON2.
6.
Set the WR bit. This will begin the row erase
cycle.
7.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
8.
Re-enable interrupts.
EXAMPLE 6-2:
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
upper (CODE_ADDR)
; load TBLPTR with the base
MOVWF
TBLPTRU
; address of the memory block
MOVLW
high (CODE_ADDR)
MOVWF
TBLPTRH
MOVLW
low (CODE_ADDR)
MOVWF
TBLPTRL
ERASE_ROW
BSF
EECON1, EEPGD
; point to FLASH program memory
BCF
EECON1, CFGS
; access FLASH program memory
BSF
EECON1, WREN
; enable write to memory
BSF
EECON1, FREE
; enable Row Erase operation
BCF
INTCON, GIE
; disable interrupts
MOVLW
55h
MOVWF
EECON2
; write 55H
Required
MOVLW
0AAh
Sequence
MOVWF
EECON2
; write 0AAH
BSF
EECON1, WR
; start erase (CPU stall)
NOP
; NOP needed for proper code execution
BSF
INTCON, GIE
; re-enable interrupts
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