參數(shù)資料
型號(hào): PIC18F46K20-E/P
廠商: Microchip Technology
文件頁(yè)數(shù): 6/42頁(yè)
文件大?。?/td> 0K
描述: IC PIC MCU FLASH 32KX16 40-DIP
產(chǎn)品培訓(xùn)模塊: XLP Deep Sleep Mode
8-bit PIC® Microcontroller Portfolio
視頻文件: World's Lowest Power in Sleep MCU: nanoWatt XLP
標(biāo)準(zhǔn)包裝: 10
系列: PIC® XLP™ 18F
核心處理器: PIC
芯體尺寸: 8-位
速度: 48MHz
連通性: I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,HLVD,POR,PWM,WDT
輸入/輸出數(shù): 35
程序存儲(chǔ)器容量: 64KB(32K x 16)
程序存儲(chǔ)器類型: 閃存
EEPROM 大?。?/td> 1K x 8
RAM 容量: 3.8K x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 14x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 40-DIP(0.600",15.24mm)
包裝: 管件
產(chǎn)品目錄頁(yè)面: 657 (CN2011-ZH PDF)
配用: AC164112-ND - VOLTAGE LIMITER MPLAB ICD2 VPP
DM164124-ND - KIT STARTER FOR PIC18F4XK20
PIC18F2XK20/4XK20
DS41297F-page 14
Advance Information
2009 Microchip Technology Inc.
FIGURE 3-2:
BULK ERASE TIMING DIAGRAM
3.1.2
LOW-VOLTAGE ICSP BULK ERASE
When using low-voltage ICSP, the part must be
supplied by the voltage specified in parameter D111 if a
Bulk Erase is to be executed. All other Bulk Erase
details as described above apply.
If it is determined that a program memory erase must
be performed at a supply voltage below the Bulk Erase
limit, refer to the erase methodology described in
If it is determined that a data EEPROM erase must be
performed at a supply voltage below the Bulk Erase
limit, follow the methodology described in Section 3.3
“Data EEPROM Programming” and write ‘1’s to the
array.
3.1.3
ICSP ROW ERASE
Regardless of whether high or low-voltage ICSP is
used, it is possible to erase one row (64 bytes of data),
provided the block is not code or write-protected. Rows
are located at static boundaries beginning at program
memory address 000000h, extending to the internal
program memory limit (see Section 2.3 “Memory
The Row Erase duration is self-timed. After the WR bit
in EECON1 is set, two NOPs are issued. Erase starts
upon the 4th PGC of the second NOP. It ends when the
WR bit is cleared by hardware.
The code sequence to Row Erase a PIC18F2XK20/
4XK20 device is shown in Table 3-3. The flowchart
shown in Figure 3-3 depicts the logic necessary to com-
pletely erase a PIC18F2XK20/4XK20 device. The timing
diagram for Row Erase is identical to the data EEPROM
write timing shown in Figure 3-7.
n
12
3
4
1
215 16
12
3
PGC
P5
P5A
PGD
PGD = Input
0
00
1
P11
P10
Erase Time
00
0
12
00
4
0
1
2
15 16
P5
12
3
P5A
4
000
0
n
4-bit Command
16-bit
Data Payload
16-bit
Data Payload
16-bit
Data Payload
11
Note:
The TBLPTR register can point at any byte
within the row intended for erase.
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