參數(shù)資料
型號(hào)： PK60N512VLL100
廠商： Freescale Semiconductor
文件頁數(shù)： 29/76頁
文件大?。?/td> 0K
描述： IC ARM CORTEX MCU 512K 100-LQFP
產(chǎn)品培訓(xùn)模塊： Kinetis® Cortex-M4 Microcontroller Family
標(biāo)準(zhǔn)包裝： 1
系列： Kinetis
核心處理器： ARM? Cortex?-M4
芯體尺寸： 32-位
速度： 100MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，I²C，IrDA，SDHC，SPI，UART/USART，USB，USB OTG
外圍設(shè)備： DMA，I²S，LVD，POR，PWM，WDT
輸入/輸出數(shù)： 66
程序存儲(chǔ)器容量： 512KB（512K x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 128K x 8
電壓 - 電源 (Vcc/Vdd)： 1.71 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 25x16b，D/A 1x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 105°C
封裝/外殼： 100-LQFP
包裝： 托盤
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol
Description
Min.
Typ.
Max.
Unit
IDD_PGM
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
IDD_ERS
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
50
—
years
tnvmretp1k Data retention after up to 1 K cycles
20
100
—
years
nnvmcycp Cycling endurance
10 K
50 K
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
50
—
years
tnvmretd1k Data retention after up to 1 K cycles
20
100
—
years
nnvmcycd Cycling endurance
10 K
50 K
—
cycles
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
50
—
years
tnvmretee10 Data retention up to 10% of write endurance
20
100
—
years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree32k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 4096
EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
175 K
1.6 M
6.4 M
50 M
400 M
—
writes
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
35
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PK60N512VLQ100 功能描述:ARM微控制器 - MCU KINETIS 512K ENET (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
PK60N512VMC100 功能描述:ARM微控制器 - MCU KINETIS 512K USB LCD (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
PK60N512VMD100 功能描述:ARM微控制器 - MCU Kinetis 512K enet (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
PK60N512VMD100 制造商:Freescale Semiconductor 功能描述:Kinetis 512K enet
PK60S 制造商:Mueller Electric Company 功能描述:
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