參數(shù)資料
型號(hào): pLSI1032E-125LJ
廠商: Lattice Semiconductor Corporation
英文描述: High-Density Programmable Logic
中文描述: 高密度可編程邏輯
文件頁數(shù): 3/16頁
文件大小: 212K
代理商: PLSI1032E-125LJ
3
Specifications
ispLSI and pLSI 1032E
Absolute Maximum Ratings
1
Supply Voltage V
cc
.................................. -0.5 to +7.0V
Input Voltage Applied........................-2.5 to V
CC
+1.0V
Off-State Output Voltage Applied .....-2.5 to V
CC
+1.0V
Storage Temperature................................ -65 to 150
°
C
Case Temp. with Power Applied .............. -55 to 125
°
C
Max. Junction Temp. (T
J
) with Power Applied ... 150
°
C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
T
A
= 0
°
C to + 70
°
C
T
A
= -40
°
C to + 85
°
C
SYMBOL
Table 2-0005/1032E
V
CC
V
IH
V
IL
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
4.75
4.5
2.0
0
5.25
5.5
V
cc
+1
0.8
V
V
V
V
Commercial
Industrial
Capacitance (T
A
=25
o
C, f=1.0 MHz)
Data Retention Specifications
Table 2-0008/1032E
PARAMETER
pLSI Erase/Reprogram Cycles
100
Data Retention
ispLSI Erase/Reprogram Cycles
MINIMUM
20
10000
MAXIMUM
UNITS
Years
Cycles
Cycles
C
SYMBOL
Table 2-0006/1032E
C
PARAMETER
Y0 Clock Capacitance
15
UNITS
pf
TYPICAL
8
TEST CONDITIONS
V = 5.0V, V = 2.0V
1
2
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
pf
V = 5.0V, V = 2.0V
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