參數(shù)資料
型號(hào)： PM100DHA120
英文描述： TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C)
中文描述： 晶體管| IGBT功率模塊|半橋| 1.2KV五（巴西）國(guó)際消費(fèi)電子展| 100號(hào)A一（c）
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 97K
代理商： PM100DHA120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
Apr. 2004
V
D
= 15V
Detect Tj of IGBT chip
–
20
≤
T
j
≤
125
°
C
V
D
= 15V, V
FO
= 15V
(Note-3)
V
D
= 15V
(Note-3)
–
20
≤
T
j
≤
125
°
C, V
D
= 15V (Fig. 3,6)
V
D
= 15V
(Fig. 3,6)
3.5
3.5
—
—
—
—
Main terminal
Mounting part
screw : M5
screw : M5
—
Symbol
Parameter
Mounting torque
Mounting torque
Weight
Condition
Unit
N
m
N
m
g
Limits
Typ.
3.0
3.0
380
Min.
2.5
2.5
—
Max.
MECHANICAL RATINGS AND CHARACTERISTICS
V
D
= 15V, V
CIN
= 15V
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
V
N
W
N
-V
NC
I
D
μ
s
°
C
V
mA
ms
25
10
1.8
2.3
—
—
—
—
12.5
—
0.01
15
—
mA
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
V
th(ON)
V
th(OFF)
SC
t
off(SC)
OT
OT
r
UV
UV
r
I
FO(H)
I
FO(L)
t
FO
Trip level
Reset level
Trip level
Reset level
CONTROL PART
—
—
1.2
1.7
200
—
135
—
11.5
—
—
—
1.0
Parameter
Symbol
Condition
Max.
Min.
Typ.
Unit
Limits
15
5
1.5
2.0
—
0.2
145
125
12.0
12.5
—
10
1.8
(Note-3) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
V
V
N1
-V
NC
V
XP1
-V
XPC
A
RECOMMENDED CONDITIONS FOR USE
Recommended value
≤
400
Unit
V
Condition
Symbol
V
CC
Parameter
Applied across P-N terminals
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
V
N
W
N
-V
NC
(Note-4)
Using Application Circuit of Fig. 8
For IPM
’
s each input signals
(Fig. 7)
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
15
±
1.5
≤
0.8
≥
9.0
≤
20
≥
2.0
V
CIN(ON)
V
CIN(OFF)
f
PWM
t
dead
V
D
V
kHz
μ
s
V
(Note-4) With ripple satisfying the following conditions dv/dt swing
≤
±
5V/
μ
s, Variation
≤
2V peak to peak
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PM100RL1A120 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 100A 1200V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 100A, 1.2KV, MODULE; IPM Power Device:IGBT; Current Rating (Ic / Id):100A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR
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