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| 型號： | PM100DHA120 |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|半橋| 1.2KV五（巴西）國際消費電子展| 100號A一（c） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 97K |
| 代理商： | PM100DHA120 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
Apr. 2004
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (V
D
), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing
“
SC
”
tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above V
CES
rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
U,V,W, (N)
U,V,W, (N)
V
D
(all)
Fig. 1 V
CE(sat)
Test
IN
Fo
IN
Fo
V
D
(all)
Fig. 2 V
EC
Test
V
CIN
(0V)
Ic
V
V
P, (U,V,W)
V
CIN
(15V)
–
Ic
Fig. 7 Dead time measurement point example
0V
1.5V
1.5V
1.5V
t
dead
2V
2V
2V
0V
t
t
t
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
IPM
’
input signal V
CIN
(Upper Arm)
IPM
’
input signal V
CIN
(Lower Arm)
10%
90%
trr
Irr
tr
td(on)
tc(on)
tc(off)
td(off)
V
CIN
Ic
V
CE
10%
10%
10%
90%
tf
(ton= td(on) + tr)
(toff= td(off) + tf)
Fo
Fo
P
N
N
C
S
C
S
U,V,W
Vcc
Vcc
Ic
Ic
V
D
(all)
V
D
(all)
P
U,V,W
V
CIN
V
CIN
V
CIN
(
15V
)
V
CIN
(
15V
)
Fo
Fo
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
a) Lower Arm Switching
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Signal input
(Upper Arm)
Signal input
(Lower Arm)
b) Upper Arm Switching
V
CIN
Fig. 5 I
CES
Test
Fig. 6 SC test waveform
SC
Short Circuit Current
toff(SC)
V
D
(all)
U,V,W, (N)
P, (U,V,W)
A
Pulse
V
CE
V
CIN
(15V)
Ic
Fo
IN
Fo
Constant Current
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| PM100DSA120 | 功能描述:MOD IPM DUAL 1200V 100A RoHS:否 類別:半導體模塊 >> 功率驅動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM100DSA120_00 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
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| PM100RL1A060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 100A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 100A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):100A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR |
| PM100RL1A120 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 100A 1200V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 100A, 1.2KV, MODULE; IPM Power Device:IGBT; Current Rating (Ic / Id):100A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR |
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