參數(shù)資料
型號: PM6681ATR
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: 0.4 A DUAL SWITCHING CONTROLLER, QCC32
封裝: 5 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, VFQFPN-32
文件頁數(shù): 28/47頁
文件大?。?/td> 2762K
代理商: PM6681ATR
Design guidelines
PM6681A
34/47
Dual N-channel MOSFETs can be used in applications with a maximum output current of
about 3 A. Below there is a list of some MOSFET manufacturers.
A rectifier across the low side MOSFET is recommended. The rectifier works as a voltage
clamp across the synchronous rectifier and reduces the negative inductor swing during the
dead time between turning the high-side MOSFET off and the synchronous rectifier on. It
can increase the efficiency of the switching section, since it reduces the low side switch
losses. A Schottky diode is suitable for its low forward voltage drop (0.3 V). The diode
reverse voltage must be greater than the maximum input voltage VINmax. A minimum
recovery reverse charge is preferable. Below there is a list of some Schottky diode
manufacturers.
9.6
Closing the integrator loop
The design of external feedback network depends on the output voltage ripple. If the ripple
is higher than approximately 30 mV, the feedback network (Figure 39) is usually enough to
keep the loop stable.
Table 15.
Low side MOSFET manufacturer
Manufacturer
Type
RDS(on) (m)
Rated reverse voltage (V)
ST
STS17NF3LL
5.5
0.047
30
ST
STS25NH3LL
3.5
0.011
30
Table 16.
Dual MOSFET manufacturer
Manufacturer
Type
RDS(on) (m) Gate charge (nC) Rated reverse voltage (V)
ST
STS8DNH3LL
25
10
30
ST
STS4DNF60L
65
32
60
Table 17.
Schottky diode manufacturer
Manufacturer
Series
Forward voltage
(V)
Rated reverse voltage
(V)
Reverse current
(uA)
ST
STPS1L30M
0.34
30
0.00039
ST
STPS1L20M
0.37
20
0.000075
GS
RSS
C
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