- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368070 > PMBT2223A (NXP Semiconductors N.V.) NPN switching transistors PDF資料下載
參數(shù)資料
| 型號： | PMBT2223A |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN switching transistors |
| 中文描述： | NPN開關(guān)晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | PMBT2223A |
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN switching transistors
PMBT2222; PMBT2222A
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
PMBT2222
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
CB
= 50 V; T
j
= 125
°
C
10
10
nA
μ
A
collector cut-off current
PMBT2222A
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 125
°
C
I
C
= 0; V
EB
= 5 V
10
10
nA
μ
A
I
EBO
emitter cut-off current
PMBT2222A
DC current gain
35
50
75
10
300
nA
h
FE
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
55
°
C 35
I
C
= 150 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 1 V
I
C
= 500 mA; V
CE
= 10 V
100
50
DC current gain
PMBT2222
PMBT2222A
collector-emitter saturation voltage
PMBT2222
PMBT2222A
collector-emitter saturation voltage
PMBT2222
PMBT2222A
base-emitter saturation voltage
PMBT2222
PMBT2222A
base-emitter saturation voltage
PMBT2222
PMBT2222A
collector capacitance
30
40
V
CEsat
I
C
= 150 mA; I
B
= 15 mA; note 1
400
300
mV
mV
I
C
= 500 mA; I
B
= 50 mA; note 1
1.6
1
V
V
V
BEsat
I
C
= 150 mA; I
B
= 15 mA; note 1
0.6
1.3
1.2
V
V
I
C
= 500 mA; I
B
= 50 mA; note 1
2.6
2
8
V
V
pF
C
c
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PMBT5088 | NPN general purpose transistor |
| PMBZ5229B | Voltage Regulator Diodes |
| PMBZ5226 | Voltage regulator diodes |
| PMBZ5226B | Voltage regulator diodes |
| PMBZ5227B | Voltage regulator diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMBT2369 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 15V, 200MA, SOT23 制造商:NXP Semiconductors 功能描述:NPN switching transistor,PMBT2369 SOT23 |
| PMBT2369 /T3 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMBT2369 T/R | 制造商:NXP Semiconductors 功能描述: |
| PMBT2369,215 | 功能描述:兩極晶體管 - BJT NPN SW 200MA 15V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMBT2369,235 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。