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參數(shù)資料
| 型號： | PMWD30UN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual uTrenchMOS ultra low level FET |
| 中文描述： | 5000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AB |
| 封裝： | PLASTIC, MO-153, TSSOP-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 242K |
| 代理商： | PMWD30UN |
Philips Semiconductors
PMWD30UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
3 of 12
9397 750 10835
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
V
GS
≥
4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
T
sp
= 25
°
C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0
50
100
150
200
(%)
Tsp (
°
C)
Pder
03aa25
0
40
80
120
0
50
100
150
200
Tsp (
°
C)
Ider
(%)
P
der
P
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
D 25 C
)
-------------------
100
%
×
=
003aaa274
1
10
102
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
tp = 10 μs
1 s
Limit RDSon = VSD/ID
10-1
10-2
10-1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PMWD30UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWS-2T | 制造商:ALLSTATES 功能描述: 制造商:All-States Inc 功能描述: |
| PM-WT01 | 制造商:PMI 制造商全稱:PMI 功能描述:WIDEBAND RF PULSE COUPLING TRANSFORMERS |
| PM-WT02 | 制造商:PMI 制造商全稱:PMI 功能描述:WIDEBAND RF PULSE COUPLING TRANSFORMERS |
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