參數(shù)資料
型號: PMWD30UN
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: Dual uTrenchMOS ultra low level FET
中文描述: 5000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AB
封裝: PLASTIC, MO-153, TSSOP-8
文件頁數(shù): 4/12頁
文件大?。?/td> 242K
代理商: PMWD30UN
Philips Semiconductors
PMWD30UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
4 of 12
9397 750 10835
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4.
Thermal characteristics
4.1 Transient thermal impedance
Table 3:
Symbol Parameter
R
th(j-sp)
thermal resistance from junction to solder point
R
th(j-a)
thermal resistance from junction to ambient
Thermal characteristics
Conditions
Figure 4
minimum footprint;
mounted on printed-circuit board
Min Typ Max
-
55
-
100 -
Unit
K/W
K/W
70
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration.
003aaa275
10-
1
1
10
102
10-4
10-
3
10-
2
10-
1
1
10
10
2
tp (s)
Zth(j-sp)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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