參數(shù)資料
型號(hào): PPC405CR-3KC200CZ
廠商: APPLIEDMICRO INC
元件分類: 微控制器/微處理器
英文描述: PowerPC 405CR Embedded Processor
中文描述: 32-BIT, 200 MHz, RISC PROCESSOR, PBGA316
封裝: 27 X 27 MM, LEAD FREE, PLASTIC, EBGA-316
文件頁數(shù): 31/42頁
文件大?。?/td> 446K
代理商: PPC405CR-3KC200CZ
PPC405CR – PowerPC 405CR Embedded Processor
Revision 1.02 – January 11, 2005
Data Sheet
AMCC
31
Test Conditions
Clock timing and switching characteristics are specified in accordance with
operating conditions shown in the table “Recommended DC Operating
Conditions.” AC specifications are characterized at OV
DD
= 3V and T
J
=
+85°C with the 50pF test load shown in the figure at right.
Table 10. DC Electrical Characteristics
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Active Operating Current (V
DD
)—133MHz
I
DD
TBD
TBD
mA
Active Operating Current (OV
DD
)—133MHz
I
ODD
TBD
TBD
mA
Active Operating Current (V
DD
)—200MHz
I
DD
400
610
mA
Active Operating Current (OV
DD
)—200MHz
I
ODD
35
40
mA
Active Operating Current (V
DD
)—266MHz
I
DD
TBD
TBD
mA
Active Operating Current (OV
DD
)—266MHz
I
ODD
TBD
TBD
mA
PLL V
DD
Input current
I
PLL
16
23
mA
Note:
1. Maximum power is characterized at V
DD
= 2.7V, OV
DD
= 3.6V, T
C
= 85
°
C, across the silicon process (worse case to best case), while
running an application designed to maximize power consumption. The specification at 200MHz corresponds to CPU = 200 MHz, PLB =
100MHz, OPB = EBC = 50MHz. The 266MHz maximum power was measured with CPU = 266.6MHz, PLB =133.3MHz, OPB = EBC =
66.6MHz.
2. AV
DD
should be derived from V
DD
using the following circuit:
V
DD
C1
C2
C3
AV
DD
L1
L1 – 2.2
μ
H SMT inductor (equivalent to MuRata
LQH3C2R2M34) or SMT chip ferrite bead (equivalent
to MuRata BLM31A700S)
C1 – 3.3
μ
F SMT tantalum
C2 –
0.1
μ
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
C3 – 0.01
μ
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
+
AGND
GND
Output
Pin
50pF
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