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| 型號： | PSD8135V20MIT |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Enhanced High Power Factor Preregulator 16-SOIC 0 to 70 |
| 中文描述： | Flash在系統(tǒng)可編程ISP的外設(shè)的8位微控制器 |
| 文件頁數(shù)： | 94/110頁 |
| 文件大小： | 1685K |
| 代理商： | PSD8135V20MIT |
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PSD813F1
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Table 60. Flash Program, WRITE and Erase Times (3V devices)
Symbol
Parameter
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid t
Q7VQV
time units before the data byte, DQ0-DQ7, is valid for reading.
Table 61. EEPROM WRITE Times (5V devices)
Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM
cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
2. These specifications are for writing a page to EEPROM cells.
Table 62. EEPROM WRITE Times (3V devices)
Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM
cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
2. These specifications are for writing a page to EEPROM cells.
Min.
Typ.
Max.
Unit
Flash Program
8.5
s
Flash Bulk Erase
1
(pre-programmed)
3
30
s
Flash Bulk Erase (not pre-programmed)
10
s
t
WHQV3
Sector Erase (pre-programmed)
1
30
s
t
WHQV2
Sector Erase (not pre-programmed)
2.2
s
t
WHQV1
Byte Program
14
1200
μs
Program / Erase Cycles (per Sector)
100,000
cycles
t
WHWLO
Sector Erase Time-Out
100
μs
t
Q7VQV
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)
2
30
ns
Symbol
Parameter
Min
Typ
Max
Unit
t
EEHWL
Write Protect After Power Up
5
ms
t
BLC
EEPROM Byte Load Cycle Timing (Note
1
)
0.2
120
μs
t
WCB
EEPROM Byte Write Cycle Time
4
10
ms
t
WCP
EEPROM Page Write Cycle Time (Note
2
)
6
30
ms
Program/Erase Cycles (Per Sector)
10,000
cycles
Symbol
Parameter
Min
Typ
Max
Unit
t
EEHWL
Write Protect After Power Up
5
ms
t
BLC
EEPROM Byte Load Cycle Timing (Note
1
)
0.2
120
μs
t
WCB
EEPROM Byte Write Cycle Time
4
10
ms
t
WCP
EEPROM Page Write Cycle Time (Note
2
)
6
30
ms
Program/Erase Cycles (Per Sector)
10,000
cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PSD8135V20MT | Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD8135V70MT | Enhanced High Power Factor Preregulator 16-SOIC 0 to 70 |
| PSD8135V90MT | Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD813F1-A | Enhanced High Power Factor Preregulator 16-PDIP 0 to 70 |
| PSD813F1-A-12JI | Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSD8135V20MT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD8135V70JIT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD8135V70JT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD8135V70MIT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD8135V70MT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
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