參數(shù)資料
型號(hào)： PSMN063-150
廠商： NXP Semiconductors N.V.
英文描述： N-channel enhancement mode field-effect transistor
中文描述： N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù)： 2/12頁
文件大?。?/td> 279K
代理商： PSMN063-150
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 31 October 2001
2 of 12
9397 750 08594
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
3.
Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 175
o
C
T
j
= 25 to 175
o
C; R
GS
= 20 k
Min
Max
150
150
±
20
29
Unit
V
V
V
A
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
20
A
I
DM
peak drain current
116
A
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
total power dissipation
storage temperature
operating junction temperature
55
55
150
+175
+175
W
°
C
°
C
source (diode forward) current (DC)
peak source (diode forward) current
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
29
116
A
A
unclamped inductive load;
I
D
= 26 A; t
p
= 0.2 ms;
V
DD
≤
25 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
unclamped inductive load;
V
DD
≤
25 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
502
mJ
I
AS
non-repetitive avalanche current
29
A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN063-150D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN063-150D /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN063-150D,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN069-100YS 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V17ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):56.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes
PSMN069-100YS,115 功能描述:MOSFET Single NChannel 100V 68A 56W 130mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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