參數(shù)資料
型號(hào)： PSMN063-150
廠商： NXP Semiconductors N.V.
英文描述： N-channel enhancement mode field-effect transistor
中文描述： N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù)： 6/12頁
文件大?。?/td> 279K
代理商： PSMN063-150
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 31 October 2001
6 of 12
9397 750 08594
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
VGS (V) = 10
8.0
6.0
5.4
5.2
5.0
4.8
4.6
4.4
ID
(A)
VDS (V)
003aaa150
0
2
4
6
8
VGS (V)
ID
(A)
10
20
30
0
Tj = 175 oC
25 oC
003aaa152
10
8
6
5.4
4.8
4.4
VGS (V) =
5.0
4.6
5.2
0.20
0.16
0.12
0.08
0.04
0
RDSon
(
)
0
5
10
15
20
25
30
ID (A)
003aaa151
03aa30
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-60
-20
20
60
100
140
Tj (oC)
180
a
a
R
R
DSon 25
°
C
)
-----------------------------
=
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN063-150D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN063-150D /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN063-150D,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN069-100YS 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V17ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,17A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):56.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes
PSMN069-100YS,115 功能描述:MOSFET Single NChannel 100V 68A 56W 130mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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