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參數(shù)資料
| 型號(hào)： | PSS8050D |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | PSS8050D |
2002 Nov 18
3
Philips Semiconductors
Product specification
NPN medium power 25 V transistor
PSS8050
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Operated under pulsed conditions: pulse width t
p
≤
1 s; duty cycle
δ ≤
0.75%.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
in free air; note 2
in free air; note 3
147
139
125
K/W
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
45
40
TYP.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
= 35 V; I
E
= 0
V
CB
= 35 V; I
E
= 0; T
amb
= 150
°
C
V
CE
= 25 V; I
B
= 0
V
EB
= 6 V; I
C
= 0
I
C
= 5 mA; V
CE
= 1 V
I
C
= 800 mA; V
CE
= 1 V
I
C
= 100 mA; V
CE
= 1 V
100
50
100
100
nA
μ
A
nA
nA
I
CEO
I
EBO
h
FE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
DC current gain
PSS8050C
PSS8050D
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
120
160
100
165
200
300
500
1.2
1
V
CEsat
V
BEsat
V
BEon
f
T
I
C
= 800 mA; I
B
= 80 mA
I
C
= 800 mA; I
B
= 80 mA
I
C
= 10 mA; V
CE
= 1 V
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
mV
V
V
MHz
C
c
collector capacitance
10
pF
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