參數(shù)資料
型號(hào): PTB20038
廠商: ERICSSON
英文描述: 25 Watts, 860-900 MHz Cellular Radio RF Power Transistor
中文描述: 25瓦,860-900兆赫蜂窩無線電射頻功率晶體管
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 44K
代理商: PTB20038
e
1
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
Input Power (Watts)
O
V
CC
= 25 V
I
CQ
= 100 mA
f = 900 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.7
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
65
0.37
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
2.7
°C/W
PTB 20038
25 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
20038
LOT CODE
Description
The 20038 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 25 watts minimum output power, it may be used for
both CW and PEP applications. It is specifically designed for high
efficiency operation at average power levels around 10 watts with
high PEP capacity. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability. 100%
lot traceability is standard.
25 Watts, 860–900 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20200
9/28/98
相關(guān)PDF資料
PDF描述
PTB20046 1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor
PTB20051 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
PTB20053 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor
PTB20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor
PTB20077 0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTB20046 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor
PTB20051 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
PTB20053 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20074 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20077 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor