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參數(shù)資料
| 型號： | PTB20038 |
| 廠商： | ERICSSON |
| 英文描述： | 25 Watts, 860-900 MHz Cellular Radio RF Power Transistor |
| 中文描述： | 25瓦，860-900兆赫蜂窩無線電射頻功率晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | PTB20038 |
PTB 20038
2
e
0
10
20
30
40
50
60
70
80
840
855
870
885
900
915
Frequency (MHz)
E
V
CC
= 25 V
I
CQ
= 100m A
Circuit Tuned for
25 W Load Line
Pout = 25 W
Pout = 10 W
Efficiency vs. Frequency
(as measeured in a broadband circuit)
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V(
BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V(
BR)CES
55
70
—
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V(
BR)EBO
3.5
5
—
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
—
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 25 W, I
CQ
= 100 mA, f = 900 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 25 W, I
CQ
= 100 mA, f = 900 MHz)
Gain
(V
CC
= 25 Vdc, Pout = 10 W, I
CQ
= 100 mA, f = 900 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 10 W, I
CQ
= 100 mA, f = 900 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 10 W, I
CQ
= 100 mA,
f = 900 MHz—all phase angles at frequency of test)
G
pe
9.0
10.0
—
dB
η
C
50
—
—
%
G
pe
10
11
—
dB
η
C
35
—
—
%
Ψ
—
—
30:1
—
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20038 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20046 | 1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor |
| PTB20051 | 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor |
| PTB20053 | 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20074 | 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor |
| PTB20077 | 0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20046 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor |
| PTB20051 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor |
| PTB20053 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20074 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20077 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor |
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