參數資料
型號: PTB20248
廠商: ERICSSON
英文描述: 0.7 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor
中文描述: 0.7瓦,1465年至1513年兆赫蜂窩無線電射頻功率晶體管
文件頁數: 1/3頁
文件大?。?/td> 446K
代理商: PTB20248
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4
Vdc
Collector Current (continuous)
I
C
0.5
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
5.4
0.031
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
32.3
°C/W
PTB 20248
0.7 Watts, 1465–1513 MHz
Cellular Radio RF Power Transistor
Description
The 20248 is a class A, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
0
0.2
0.4
0.6
0.8
1
1.2
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
Input Power (Watts)
O
V
CC
= 26 V
I
CQ
= 0.120 A
f = 1513 MHz
Package 20227
0.7 Watts, 26 Vdc
Class A Characteristics
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
20248
LOT CODE
9/28/98
相關PDF資料
PDF描述
PTB20249 2.5 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor
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PTB20264 10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
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