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參數(shù)資料
| 型號(hào)： | PTF080101S |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管功率10W，860 - 960MHZ |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | PTF080101S |
Developmental Data Sheet
1
2004-03-08
Advance Information
PTF080101
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.15 A, f = 959.8 MHz
0
1
2
3
4
25
30
35
40
Output Power (dBm)
E
0
10
20
30
40
E
EVM
Efficiency
LDMOS RF Power Field Effect Transistor
10 W, 860–960 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19 dB
- Efficiency = 31%
Typical CW performance
- Output power at P–1dB = 13 W
- Gain = 18 dB
- Efficiency = 55%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF080101 is a 10 W, internally matched
GOLDMOS
FET intended
for EDGE applications in the 860 to 960 MHz band. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
PTF080101S
Package 32259
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 4.0 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
1.3
–61
–75
19
31
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Min
Typ
Max
—
—
—
Units
dB
%
dBc
G
ps
η
D
IMD
—
—
—
19
37
–32
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| PTF080601 | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080101S- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 10W, 860-960 MHz |
| PTF080101S V1 | 功能描述:IC FET RF LDMOS 10W H-32259-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:GOLDMOS® 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| PTF080101S-DS1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 10W, 860-960 MHz |
| PTF080101SV1 | 功能描述:射頻MOSFET電源晶體管 Hi Pwr RF LDMOS FET 10 W, 860-960 MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PTF080101SV1XT | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 65V 3-Pin Case 32259 |
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