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參數(shù)資料
| 型號： | PTF080101S |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管功率10W，860 - 960MHZ |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | PTF080101S |
4
GOLDMOS
is a registered trademark of Infineon Technologies AG.
Edition 2004-03-08
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
www.infineon.com/rfpower
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life–support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
PTF080101
Confidential
Revision History:
Previous Version:
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2004-03-08
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Developmental Data Sheet
Subjects (major changes since last revision)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF080451 | LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz |
| PTF080451E | LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz |
| PTF080601 | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601A | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601E | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080101S- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 10W, 860-960 MHz |
| PTF080101S V1 | 功能描述:IC FET RF LDMOS 10W H-32259-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:GOLDMOS® 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| PTF080101S-DS1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 10W, 860-960 MHz |
| PTF080101SV1 | 功能描述:射頻MOSFET電源晶體管 Hi Pwr RF LDMOS FET 10 W, 860-960 MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PTF080101SV1XT | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 65V 3-Pin Case 32259 |
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