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參數(shù)資料
| 型號： | PTF080601A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管60瓦，860-960兆赫 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 293K |
| 代理商： | PTF080601A |
Developmental Data Sheet
5
2003-12-05
Developmental PTF080601
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Package Outline Specifications
Package 31248
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10± 0.051/0.025 [.004±.002/.001]
5. Lids are toleranced with reference to leads.
相關(guān)PDF資料 |
PDF描述 |
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| PTF080601E | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601F | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080901 | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901E | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080601E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601EF-DS1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080601F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080901 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
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