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參數(shù)資料
| 型號： | PTF080601F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管60瓦，860-960兆赫 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 293K |
| 代理商： | PTF080601F |
Developmental Data Sheet
2
2003-12-05
Developmental PTF080601
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
DS
= 10 μA
V
(BR)DSS
—
65
—
V
Drain Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
—
1.0
—
μA
On-State Resistance
V
GS
= 10 V, I
DS
= 1 A
R
DS(on)
—
0.1
—
Operating Gate Voltage
V
DS
= 28 V, I
DQ
= 550 mA
V
GS
—
3.2
—
V
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
I
GSS
—
—
1.0
μA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
V
Gate-Source Voltage
V
GS
–0.5 to +12
V
Junction Temperature
T
J
200
°C
Total Device Dissipation
Above 25°C derate by
PTF080601A
P
D
180
1.03
W
W/°C
Total Device Dissipation
Above 25°C derate by
PTF080601E
P
D
195
1.11
W
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (T
CASE
= 70°C) PTF080601A
R
θ
JC
R
θ
JC
0.972
0.897
°C/W
°C/W
PTF080601E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080901 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901EF_DS2A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF081301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
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