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參數(shù)資料
| 型號： | PTF211802A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管180瓦，2110至2170年兆赫 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 169K |
| 代理商： | PTF211802A |
Data Sheet
2
2004-02-13
PTF211802
Broadband Performance
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 38 W
5
2080
10
15
20
25
30
35
40
2100
2120
2140
2160
2180
2200
Frequency (MHz)
G
-35
-30
-25
-20
-15
-10
-5
0
I
Gain
Efficiency
Return Loss
Power Sweep, under Pulsed Conditions
V
DD
= 28 V, I
DQ
= 2.0 A, f = 2140 MHz,
pulse period = 1 ms, 0.8% duty cycle
46
48
50
52
54
56
58
30
32
34
36
38
40
42
44
Input Power (dBm)
O
P-1dB = 52.8 dBm
P-3dB = 53.6 dBm
Ideal
Actual
Typical Performance
(data taken in a production test fixture)
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
DS
= 10 μA/side
V
(BR)DSS
65
—
—
V
Drain Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
—
—
1.0
μA
On–State Resistance
V
GS
= 10 V, V
DS
= 0.1 V
R
DS(on)
—
0.1
—
Operating Gate Voltage
V
DS
= 28 V, I
DQ
= 1.0 A/side
V
GS
2.5
3.2
4
V
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
I
GSS
—
—
1.0
μA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
V
Gate–Source Voltage
V
GS
–0.5 to +12
V
Junction Temperature
T
J
200
°C
Total Device Dissipation
Above 25°C derate by
PTF211802A
P
D
498
2.85
W
W/°C
Total Device Dissipation
Above 25°C derate by
PTF211802E
P
D
647
3.70
W
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance
(T
CASE
= 70°C, 130 W CW)
PTF211802A
R
θ
JC
R
θ
JC
0.35
°C/W
PTF211802E
0.27
°C/W
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