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參數(shù)資料
| 型號： | PTF211802A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管180瓦，2110至2170年兆赫 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 169K |
| 代理商： | PTF211802A |
Data Sheet
7
2004-02-13
PTF211802
Package Outline Specifications
Type
PTF211802A
PTF211802E
Package Outline
20275
30275
Package Description
Standard ceramic, flange
Thermally enhanced, flange
Marking
PTF211802A
PTF211802E
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Package 30275
Package 20275
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001 ]
S
41.15
[1.620]
1.63
[.064]
2.18
[.086] SPH
31.24± 0.28
[1.230± .011]
35.56
[1.400]
4X 11.68
[.460]
D
G
D
16.61± 0.51
[.654± .020]
2X R 1.59
[.063]
2X 3.18
[.125]
9.40
[.370 +-.006
+ 0.10
-0.15
0.51
[.020]
0.038 [.0015] -A-
2X 45°± 5° X 1.19
[.047]
4.55± 0.38
[.179± .015]
10.16
[.400]
4X 3.23± 0.25
[.127± .010]
G
ERA-H-30275-4-1-2304
[.360+-.006
LID 9.14+-0.15
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