參數(shù)資料
型號(hào): Q62702-C632
廠商: SIEMENS AG
英文描述: PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
中文描述: 自動(dòng)對(duì)焦進(jìn)步黨硅晶體管(高電流增益低集電極發(fā)射極飽和電壓)
文件頁數(shù): 5/11頁
文件大小: 101K
代理商: Q62702-C632
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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Q62702-C633 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
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