型號(hào) 廠商 描述
q62702-c629
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
q62702-c630
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
q62702-c631
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
q62702-c632
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
q62702-c633
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
q62702-c680
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG npn sisicon transistor
q62702-c684
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c685
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c686
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c687
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c688
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c688-v1
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
q62702-c688-v2
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c688-v3
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c689
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c689-v1
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c689-v2
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
q62702-c689-v3
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c689-v4
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c691
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c691-v1
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c691-v2
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors
q62702-c692
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c693
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c694
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c695
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-c696
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
q62702-c717
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
q62702-c718
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
q62702-c732
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN SILICON AF TRANSISTORS
q62702-c733
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON AF TRANSISTORS
q62702-c750
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN SILICON AF TRANSISTORS
q62702-d930
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON PLANAR TRANSISTORS
q62702-d980
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
q62702-f320
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN SILICON RF BROADBAND TRANSISTOR
q62702-f610
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON PLANAR TRANSISTOR
q62702-f612
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON PLANAR TRANSISTOR
q62702-f621
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)
q62702-f788
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)
q62702-f935
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG CAP CER 250VAC 470PF X7R 2211
q62702-f936
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners)
q62702-f938
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)
q62702-f940
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG CAP 15000PF X7R 250VAC X2 2220
q62702-d110-p
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG NPN SILICON TRANSISTORS
q62702-d111-p
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-d111-v1
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-d111-v2
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON TRANSISTORS
q62702-d160-v6
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG PNP SILICON PLANAR TRANSISTORS
q62702-a1160
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
q62702-a1161
2 3 4 5 6 7 8 9 10 11		 SIEMENS AG Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)