參數(shù)資料
型號(hào)： Q62702-F1645
廠商： SIEMENS AG
英文描述： NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
中文描述： NPN硅射頻晶體管（對(duì)于寬帶放大器的集電極電流高達(dá)1GHz的由1mA至20mA）
文件頁(yè)數(shù)： 3/11頁(yè)
文件大?。?/td> 101K
代理商： Q62702-F1645
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
￥
S21
￥
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
￥
S21
￥
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關(guān)PDF資料
PDF描述
Q62702-F1665 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Q62702-F1681 PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
Q62702-F1685 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
Q62702-F1771 Silicon N Channel MOSFET Tetrode
Q62702-F1772 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702F1656 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT363
Q62702-F1665 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Q62702F1681 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT323
Q62702-F1681 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
Q62702-F1685 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
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