參數(shù)資料
型號(hào): Q62702-F1645
廠商: SIEMENS AG
英文描述: NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
中文描述: NPN硅射頻晶體管(對(duì)于寬帶放大器的集電極電流高達(dá)1GHz的由1mA至20mA)
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 101K
代理商: Q62702-F1645
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關(guān)PDF資料
PDF描述
Q62702-F1665 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Q62702-F1681 PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
Q62702-F1685 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
Q62702-F1771 Silicon N Channel MOSFET Tetrode
Q62702-F1772 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702F1656 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT363
Q62702-F1665 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Q62702F1681 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT323
Q62702-F1681 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
Q62702-F1685 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)