參數(shù)資料
型號： Q62702-F622
廠商： SIEMENS AG
英文描述： PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
中文描述： 進(jìn)步黨硅晶體管（高擊穿電壓低集電極發(fā)射極飽和電壓）
文件頁數(shù)： 6/11頁
文件大?。?/td> 101K
代理商： Q62702-F622
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
￡
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
相關(guān)PDF資料
PDF描述
Q62702-F626 PNP SILICON PLANAR TRANSISTOR
Q62702-F640 NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages)
Q62702-F65 PNP SILICON PLANAR TRANSISTORS
Q62702-F655 LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
Q62702-F659 NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F626 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR
Q62702-F640 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages)
Q62702-F65 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS
Q62702-F655 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
Q62702-F659 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
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