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參數(shù)資料
| 型號(hào)： | Q62702-F722 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
| 中文描述： | 進(jìn)步黨硅晶體管（高擊穿電壓低集電極發(fā)射極飽和電壓） |
| 文件頁數(shù)： | 11/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F722 |
BGC420
High Frequency Products
11
Edition A13, 05/99
Package
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or
our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies, if
a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.
.
相關(guān)PDF資料 |
PDF描述 |
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| Q62702-F739 | Silicon Switching Diode (For high-speed switching) |
| Q62702-F774 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
| Q62702-F775 | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
| Q62702-F776 | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
| Q62702-F794 | NPN Silicon Transistors with High Reverse Voltage |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F739 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode (For high-speed switching) |
| Q62702-F774 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
| Q62702-F775 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
| Q62702-F776 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
| Q62702-F780 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
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