參數(shù)資料
型號(hào)： Q62702-F722
廠商： SIEMENS AG
英文描述： PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
中文描述： 進(jìn)步黨硅晶體管（高擊穿電壓低集電極發(fā)射極飽和電壓）
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 101K
代理商： Q62702-F722
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關(guān)PDF資料
PDF描述
Q62702-F739 Silicon Switching Diode (For high-speed switching)
Q62702-F774 NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
Q62702-F775 NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
Q62702-F776 NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
Q62702-F794 NPN Silicon Transistors with High Reverse Voltage
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F739 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode (For high-speed switching)
Q62702-F774 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
Q62702-F775 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
Q62702-F776 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
Q62702-F780 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor
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