參數(shù)資料
型號: Q62702-L94
廠商: SIEMENS AG
英文描述: GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
中文描述: 砷化鎵場效應(yīng)管(功率放大器,對于從400兆赫到2.5千兆赫頻率的移動(dòng)電話)
文件頁數(shù): 3/11頁
文件大小: 101K
代理商: Q62702-L94
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
S21
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
S21
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關(guān)PDF資料
PDF描述
Q62702-L96 GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)
Q62702-L99 GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
Q62702-M9 GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication)
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