參數(shù)資料
型號: Q62702-P1606
廠商: SIEMENS AG
英文描述: NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
中文描述: 叩- Silizium - Fototransistor即時貼片TOPLEDa - Geh鋟硅npn型光電晶體管的表面貼裝TOPLEDa,包
文件頁數(shù): 4/11頁
文件大?。?/td> 101K
代理商: Q62702-P1606
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關(guān)PDF資料
PDF描述
Q62702-P1607 NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
Q62702-P1610 NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package
Q62702-P1611 NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package
Q62702-P1614 NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package
Q62702-P1615 NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package
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