參數(shù)資料
型號(hào): Q62702-P358
廠商: SIEMENS AG
英文描述: Laser Diode on Submount 1.0 W cw Class 4 Laser Product
中文描述: 激光二極管W連續(xù)第4類(lèi)激光產(chǎn)品的Submount 1.0
文件頁(yè)數(shù): 2/11頁(yè)
文件大?。?/td> 101K
代理商: Q62702-P358
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
S
21
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料
PDF描述
Q62702-P367 Laser Diode in TO-220 Package 1.0 W cw Class 4 Laser Product
Q62702-P368 Laser Diode in TO-220 Package with FC-connector 0.75 W cw Class 4 Laser Product
Q62702-P393 NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
Q62702-P419 メ-モ-ャ-Strahlungsdetektoren メ-モ-ャ-Radiation Detectors
Q62702-P420 メ-モ-ャ-Strahlungsdetektoren メ-モ-ャ-Radiation Detectors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702P3581 功能描述:光電晶體管 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
Q62702P3582 制造商:OSRAM 功能描述:Phototransistor Chip Silicon 880nm 3-Pin TO-18 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18
Q62702P3583 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 850NM TH
Q62702P3584 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 850NM 2PIN - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 850NM TH
Q62702P3585 功能描述:光電晶體管 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1