參數(shù)資料
型號: Q62703-Q516
廠商: SIEMENS AG
英文描述: GaAIAs Infrared Emitter (880 nm)
中文描述: 鎵鋁砷紅外發(fā)射器(880納米)
文件頁數(shù): 5/8頁
文件大小: 552K
代理商: Q62703-Q516
Semiconductor Group
5
LSG K370, LSP K370, LOP K370, LOG K370
Relative spektrale Emission
Φ
rel
=
f
(
λ
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V (
λ
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
Φ
rel
=
f
(
)
Radiation characteristic
相關PDF資料
PDF描述
Q62703-Q517 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
Q62703-Q67 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Q62703-Q70 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 820pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
Q62703-Q71 GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
Q62703-Q72 GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
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