參數(shù)資料
型號: Q67040-A4228-A2
廠商: SIEMENS AG
英文描述: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
中文描述: 由于IGBT的反平行二極管(低正向壓降高開關(guān)速度低尾電流閉鎖免費(fèi))
文件頁數(shù): 2/8頁
文件大?。?/td> 110K
代理商: Q67040-A4228-A2
Semiconductor Group
2
Dec-02-1996
BUP 313D
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
R
thJC
R
thJC
D
0.63
1.25
K/W
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 0.35 mA, T
j
= 25 °C
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 15 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 15 A, T
j
= 125 °C
V
GE
= 15 V, I
C
= 30 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 30 A, T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 °C
Gate-emitter leakage current
V
GE
= 25 V, V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
-
-
4.3
3.4
3.3
2.7
-
-
3.9
3.2
I
CES
-
-
0.4
mA
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 15 A
Input capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
g
fs
-
12
-
S
C
iss
-
1000
1350
pF
C
oss
-
150
225
C
rss
-
70
100
相關(guān)PDF資料
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Q67040-A4229-A2 IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
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