參數(shù)資料
型號: Q67040-A4228-A2
廠商: SIEMENS AG
英文描述: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
中文描述: 由于IGBT的反平行二極管(低正向壓降高開關(guān)速度低尾電流閉鎖免費(fèi))
文件頁數(shù): 3/8頁
文件大?。?/td> 110K
代理商: Q67040-A4228-A2
Semiconductor Group
3
Dec-02-1996
BUP 313D
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 15 A
R
Gon
= 82
Rise time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 15 A
R
Gon
= 82
Turn-off delay time
V
CC
= 600 V, V
GE
= -15 V, I
C
= 15 A
R
Goff
= 82
Fall time
V
CC
= 600 V, V
GE
= -15 V, I
C
= 15 A
R
Goff
= 82
t
d(on)
-
70
100
ns
t
r
-
45
70
t
d(off)
-
400
530
t
f
-
70
95
Free-Wheel Diode
Diode forward voltage
I
F
= 15 A, V
GE
= 0 V, T
j
= 25 °C
I
F
= 15 A, V
GE
= 0 V, T
j
= 125 °C
Reverse recovery time
I
F
= 15 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt = -800 A/μs
T
j
= 25 °C
T
j
= 125 °C
Reverse recovery charge
I
F
= 15 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt = -800 A/μs
T
j
= 25 °C
T
j
= 125 °C
V
F
-
-
1.7
2.2
-
2.8
V
t
rr
-
-
100
-
150
-
ns
Q
rr
-
-
3
1
5.4
1.8
μC
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