參數(shù)資料
型號(hào): Q67040-A4229-A2
廠商: SIEMENS AG
英文描述: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
中文描述: 由于IGBT的反平行二極管(低正向壓降高開(kāi)關(guān)速度低尾電流的無(wú)閂鎖包括快速滑行二極管)
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 106K
代理商: Q67040-A4229-A2
Semiconductor Group
3
Jul-31-1996
BUP 602D
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T
j
= 125 °C
Turn-on delay time
V
CC
= 300 V, V
GE
= 15 V, I
C
= 20 A
R
Gon
= 47
Rise time
t
d(on)
-
40
60
ns
V
CC
= 300 V, V
GE
= 15 V, I
C
= 20 A
R
Gon
= 47
Turn-off delay time
t
r
-
70
110
V
CC
= 300 V, V
GE
= -15 V, I
C
= 20 A
R
Goff
= 47
Fall time
t
d(off)
-
250
330
V
CC
= 300 V, V
GE
= -15 V, I
C
= 20 A
R
Goff
= 47
t
f
-
500
680
Free-Wheel Diode
Diode forward voltage
I
F
= 20 A, V
GE
= 0 V, T
j
= 25 °C
I
F
= 20 A, V
GE
= 0 V, T
j
= 125 °C
Reverse recovery time
V
F
-
-
1.6
1.8
-
-
V
I
F
= 20 A, V
R
= -300 V, V
GE
= 0 V
d
F
/d = -300 A/μs, T
j
= 125 °C
Reverse recovery charge
t
rr
-
110
160
ns
I
F
= 20 A, V
R
= -300 V, V
GE
= 0 V
d
F
/d = -300 A/μs
T
j
= 25 °C
T
j
= 125 °C
Q
rr
-
-
1.3
0.6
2.4
1.1
μC
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