參數(shù)資料
型號(hào): Q67040-A4229-A2
廠商: SIEMENS AG
英文描述: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
中文描述: 由于IGBT的反平行二極管(低正向壓降高開關(guān)速度低尾電流的無閂鎖包括快速滑行二極管)
文件頁數(shù): 6/9頁
文件大?。?/td> 106K
代理商: Q67040-A4229-A2
Semiconductor Group
6
Jul-31-1996
BUP 602D
Typ. switching time
t = f (R
G
) ,inductive load ,
T
j
= 125°C
par.: V
CE
= 300 V, V
GE
= ± 15 V, I
C
= 20 A
0
20
40
60
80
120
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
I = f (I
C
) , nductive load , T
j
= 125°C
par.: V
CE
= 300 V, V
GE
= ± 15 V, R
G
= 47
0
5
10
15
20
25
30
35
40
A
50
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f(I
C
) ,
inductive load ,
T
j
= 125°C
par.: V
CE
= 300 V, V
GE
= ± 15 V, R
G
= 47
0
5
10
15
20
25
30
35
40
A
50
I
C
0.0
0.5
1.0
1.5
2.0
mWs
3.0
E
Eon
Eoff
Typ. switching losses
E = f(R
G
) , nductive load , T
j
= 125°C
par.: V
CE
= 300V, V
GE
= ± 15 V, I
C
= 20 A
0
20
40
60
80
120
R
G
0.0
0.5
1.0
1.5
2.0
mWs
3.0
E
Eon
Eoff
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