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參數(shù)資料
| 型號(hào)： | Q67041-A4712-A4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast S-IGBT in NPT-technology |
| 中文描述： | 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù) |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 275K |
| 代理商： | Q67041-A4712-A4 |
SGP20N60
SGB20N60, SGW20N60
1
Mar-00
Fast S-IGBT in NPT-technology
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP20N60
SGB20N60
SGW20N60
600V
20A
2.4V
150
°
C
TO-220AB
TO-263AB
TO-247AC
Q67041-A4712-A2
Q67041-A4712-A4
Q67040-S4236
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
40
20
I
Cpuls
-
80
80
V
GE
E
AS
±
20
115
V
Avalanche energy, single pulse
I
C
= 20 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
179
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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