參數(shù)資料
型號: Q67041-A4712-A4
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast S-IGBT in NPT-technology
中文描述: 快速的S -不擴散核武器條約IGBT的技術(shù)
文件頁數(shù): 6/12頁
文件大?。?/td> 275K
代理商: Q67041-A4712-A4
SGP20N60
SGB20N60, SGW20N60
6
Mar-00
t
,
S
10A
20A
30A
40A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
10
20
30
40
50
60
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 16
)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 20A)
t
,
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 20A,
R
G
= 16
)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.7mA)
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